New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis - Inria - Institut national de recherche en sciences et technologies du numérique Access content directly
Journal Articles Japanese Journal of Applied Physics Year : 2007

New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis

Abstract

In this paper, we describe the improvement of secondary ion mass spectrometry (SIMS) profile analysis by a new approach based on partial deconvolution combined with scale-frequency shrinkage. The SIMS profiles are obtained by analysis of the delta layers of boron doped silicon in a silicon matrix, analyzed using Cameca-Ims6f at oblique incidence. These profiles can be approximated closely by exponential-like tail distributions with decay length, which characterizes the collisional mixing effect. The partial deconvolution removes the residual ion mixing effect. The contributions of high-frequency noise are removed by shrinkage to a great extent of the profiles. It is shown that this approach leads to a marked improvement in depth resolution without producing artifacts and aberrations caused principally by noise. Furthermore, it is shown that the asymmetry of the delta layers, caused by the collisional mixing effect, is completely removed, the decay length is decreased by a factor of 4 compared with that before deconvolution.
Fichier principal
Vignette du fichier
JJAP.pdf (181.86 Ko) Télécharger le fichier
Origin : Files produced by the author(s)
Loading...

Dates and versions

hal-00947404 , version 1 (15-02-2014)

Identifiers

Cite

M'Hamed Boulakroune, Ahmed El Oualkadi, Djamel Benatia, Tahar Kezai. New Approach for Improvement of Secondary Ion Mass Spectrometry Profile Analysis. Japanese Journal of Applied Physics, 2007, 46 (11), pp.7441-7445. ⟨10.1143/JJAP.46.7441⟩. ⟨hal-00947404⟩
84 View
258 Download

Altmetric

Share

Gmail Facebook X LinkedIn More