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Conference Papers Year : 2020

Numerical schemes for semiconductors energy- transport models

Abstract

We introduce some finite volume schemes for unipolar energy-transport models. Using a reformulation in dual entropy variables, we can show the decay of a discrete entropy with control of the discrete entropy dissipation.
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Dates and versions

hal-02563093 , version 1 (05-05-2020)

Identifiers

  • HAL Id : hal-02563093 , version 1

Cite

Marianne Bessemoulin-Chatard, Claire Chainais-Hillairet, Hélène Mathis. Numerical schemes for semiconductors energy- transport models. Finite Volumes for Complex Applications IX, Jun 2020, Bergen, Norway. pp. 75-90. ⟨hal-02563093⟩
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