Deep-level transient spectroscopy (DLTS) TCAD-based simulation - Inria - Institut national de recherche en sciences et technologies du numérique Access content directly
Poster Communications Year : 2015

Deep-level transient spectroscopy (DLTS) TCAD-based simulation

Abstract

Optimization of solar cells device and materials require a set of tools for the control and engineering of traps states which can be introduced during the fabrication process. Deep Level Transient Spectroscopy (DLTS) technique seems to be the most sensitive measuring method to determine electronic properties of deep levels in semiconductors. We use modern device TCAD (Technology Computer Aided Design) simulation software to evaluate the DLTS technique. The simulated device is a silicon schottky diode.
No file

Dates and versions

hal-01253399 , version 1 (10-01-2016)

Identifiers

  • HAL Id : hal-01253399 , version 1

Cite

Arouna Darga, Djicknoum Diouf, Artem Baranov, Jean-Paul Kleider. Deep-level transient spectroscopy (DLTS) TCAD-based simulation. Journées Nationales du Photovoltaïque 2015 (JNPV 2015), Dec 2015, Dourdan, France. . ⟨hal-01253399⟩
628 View
0 Download

Share

Gmail Facebook X LinkedIn More