Electrochemically Gated Graphene Field-Effect Transistor for Extracellular Cell Signal Recording - Inria - Institut national de recherche en sciences et technologies du numérique
Communication Dans Un Congrès Année : 2016

Electrochemically Gated Graphene Field-Effect Transistor for Extracellular Cell Signal Recording

Résumé

This work presents an experimental characterization of electrochemically gated graphene field-effect transistors (EGFETs) to measure extracellular cell signals. The performance of the EGFETs was evaluated using cardiomyocytes cells. Extracellular signals with a peak value of 0.4 pico-amperes (pA) embedded in a noise level of 0.1 pA were recorded. Signals in current mode were compared with signals recorded as a voltage. Signals below 28 µV of magnitude can be detected in a noise floor of 7 µV with a signal-to-noise ratio of 4.
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hal-01438304 , version 1 (17-01-2017)

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Sanaz Asgarifar, Henrique L. Gomes, Ana Mestre, Pedro Inácio, J. Bragança, et al.. Electrochemically Gated Graphene Field-Effect Transistor for Extracellular Cell Signal Recording. 7th Doctoral Conference on Computing, Electrical and Industrial Systems (DoCEIS), Apr 2016, Costa de Caparica, Portugal. pp.558-564, ⟨10.1007/978-3-319-31165-4_53⟩. ⟨hal-01438304⟩
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