Dynamic Behavior of Resistive Random Access Memories (RRAMS) Based on Plastic Semiconductor
Résumé
Resistive Random Access Memories based on metal-oxide polymer diodes are characterized. The dynamic behavior is studied by recording current-voltage characteristics with varying voltage ramp speed. It is demonstrated that these organic memory devices have an internal capacitive double-layer structure, which inhibits the switching at high ramp rates (1000 V/s). This behavior is modeled and explained in terms of an equivalent circuit.
| Origine | Fichiers produits par l'(les) auteur(s) |
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