Deterministic placement of doping atoms on hydroxylated surfaces
Abstract
An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated on non-porous silica and successfully transferred onto silicon wafers.
Domains
Engineering Sciences [physics]
Origin : Files produced by the author(s)