Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies - Inria - Institut national de recherche en sciences et technologies du numérique Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2017

Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies

Résumé

This paper evaluates the impact of aging on the radiation sensitivity of 6T SRAM for two planar bulk technologies. This study is motivated by the growing impact of aging and radiation effects on the reliability of CMOS technology. A modelling methodology dedicated to this new phenomenon is proposed. This modelling uses the radiation modelling device MUSCA SEP3 and an electrical aging modelling. First, the impact of aging on SEE sensitivity is studied through a parametric modeling of the threshold voltages of the transistors composing the 6T SRAM. Then, an operative avionics environment is modelled in order to evaluate the consequences on reliability.
DFIE17064.1510305224_postprint.pdf (992.42 Ko) Télécharger le fichier

Dates et versions

hal-01633598 , version 1 (13-11-2017)

Identifiants

Citer

T. Rousselin, G. Hubert, D. Regis, M. Gatti, A. Bensoussan. Impact of aging on the soft error rate of 6T SRAM for planar and bulk technologies. Microelectronics Reliability, 2017, 76-77, pp.159-163. ⟨10.1016/j.microrel.2017.07.078⟩. ⟨hal-01633598⟩
142 Consultations
307 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More