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Article Dans Une Revue Microelectronics Reliability Année : 2013

Analysis of Schottky Gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress

Laurent Brunel
  • Fonction : Auteur
UMS
Benoit Lambert
  • Fonction : Auteur
P. Mezengue
  • Fonction : Auteur
J. Bataille
  • Fonction : Auteur
Didier Floriot
  • Fonction : Auteur
UMS
J. Grunenputt
  • Fonction : Auteur
Hans Blanck
  • Fonction : Auteur
Dominique Thales R&t Carisetti
  • Fonction : Auteur
Y. Gourdel
  • Fonction : Auteur
Arnaud Curutchet
  • Fonction : Auteur
  • PersonId : 853090

Résumé

GaN based technologies are promising in terms of electrical performances for power and high frequencies applications and their reliability assessment remains a burning issue. Thus, a good understanding of their degradation mechanisms is required to warranty their reliability. In this paper, an electrical parasitic effect has been observed on the gate-source diode forward characteristics of a set of devices under HTRB stress carried out at 175 °C up to 4000 h. This parasitic effect has been attributed to lateral surface conduction and correlated with EL signature under diode forward biasing conditions but not under transistor pinch-off biasing conditions. Then, physical analyses have pointed out the formation and growing over time of pits and cracks at the gate edge on the drain side

Domaines

Electronique
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Dates et versions

hal-01002643 , version 1 (06-06-2014)

Identifiants

  • HAL Id : hal-01002643 , version 1

Citer

Laurent Brunel, Benoit Lambert, P. Mezengue, J. Bataille, Didier Floriot, et al.. Analysis of Schottky Gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectronics Reliability, 2013, 53 (9-11), pp.1450-1455. ⟨hal-01002643⟩
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